5 June 2013

Magnetic Field-Induced Delocalized to Localized Transformation in GaAs:N

Using optical spectroscopy and the MagLab’s unique 60 tesla long-pulse magnet in Los Alamos, scientists have shown how nitrogen dopant atoms in gallium arsenide (GaAs) can form extended “supercluster” states or can break up into localized nitrogen clusters. Nitrogen-doped GaAs (GaAs1-xNx) is a semiconductor alloy with potential applications for a wide range of energy-related applications such as photovoltaics.

For more information contact Scott Crooker or This email address is being protected from spambots. You need JavaScript enabled to view it..


  • Research Area: Other Condensed Matter
  • Research Initiatives: Energy,Materials
  • Facility / Program: Pulsed Field
  • Year: 2013
Last modified on 17 April 2015