5 June 2013
Magnetic Field-Induced Delocalized to Localized Transformation in GaAs:N
Using optical spectroscopy and the MagLab’s unique 60 tesla long-pulse magnet in Los Alamos, scientists have shown how nitrogen dopant atoms in gallium arsenide (GaAs) can form extended “supercluster” states or can break up into localized nitrogen clusters. Nitrogen-doped GaAs (GaAs1-xNx) is a semiconductor alloy with potential applications for a wide range of energy-related applications such as photovoltaics.
Details
- Research Area: Other Condensed Matter
- Research Initiatives: Energy,Materials
- Facility / Program: Pulsed Field
- Year: 2013