16 December 2013

All-Electrical Nuclear Spin Polarization of Donors in Silicon

Measurements performed in the EMR program demonstrate that the nuclear spins associated with donor states in silicon field-effect transistors can be polarized at high magnetic fields by controlling the current and gate voltage on the device, i.e., the nuclear polarization can be controlled purely by electrical means.

For more information contact Stephen Hill.


  • Research Area: Qubits and Quantum Entanglement
  • Research Initiatives: Materials
  • Facility / Program: EMR
  • Year: 2013
Last modified on 17 April 2015