All-Electrical Nuclear Spin Polarization of Donors in Silicon
Measurements performed in the EMR program demonstrate that the nuclear spins associated with donor states in silicon field-effect transistors can be polarized at high magnetic fields by controlling the current and gate voltage on the device, i.e., the nuclear polarization can be controlled purely by electrical means.
- Research Area: Qubits and Quantum Entanglement
- Research Initiatives: Materials
- Facility / Program: EMR
- Year: 2013