Seminar By Goran Mihajlovic, Western Digital Corporation

Title: Magnetoresistive random access memories beyond spin transfer torque

Series: Condensed Matter Sciences Seminar

Host: Vladimir Dobrosavljevic

Abstract: Magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) switching has achieved commercial success as a non-volatile memory, replacing embedded Flash in many advanced applications [1]. In parallel, alternative MRAM technologies—such as those based on spin orbit torque (SOT) [2] and voltage-controlled magnetic anisotropy (VCMA) [3]—are being actively explored, primarily within academic research settings. The main motivation behind this research is to expand MRAM’s applicability to domains requiring ultra-fast memory and/or low energy consumption, where static random access memory (SRAM) currently remains the dominant solution [4]. In this seminar, I will introduce the physical phenomena underlying the operation of SOT and VCMA MRAM, and describe the advantages these technologies offer over STT-based MRAM. I will then review recent progress in device fabrication methods, the development of advanced materials, and the optimization of device design and operation — all of which contribute to improved performance. Finally, I will discuss the remaining challenges and current research efforts aimed at overcoming them and conclude by providing an outlook on the successful implementation of these emerging technologies.

Abstract: References

1. D. C. Worledge et al., Nat. Rev. Electr. Eng. 1, 730 (2024).
2. V. D. Nguyen et al., npj Spintronics 2, 48 (2024).
3. Y. Shao et al., Adv. Mater. Technol. 8, 2300676 (2023).
4. A. Lu et al., Nat. Rev. Electr. Eng. 1, 24 (2024).