It is equipped with a low-energy capable Focused Ion Beam (FIB) column, which allows for live-imaging of samples at high magnification (both microscopes have 1 nm resolution) while simultaneously machining with 5 nm precision using a stream of Ga ions.
Key features of this microscope are the in-column secondary electron detector that provides low-noise imaging during FIB material removal as well as imaging at very low voltages (reducing edge artifacts, channeling and beam penetration). The unique objective lens design uses an electrostatic field below the lens (unlike competing design which utilizes a strong magnetic field, causing limitations in overall performance and sample flexibility – particularly for ferromagnetic materials).
A full complement of detectors provides high resolution chemical (EDS) and crystallographic Orientation Imaging Microscopy (OIM) data. This combination provides automated sample tomography by serial sectioning using the focused ion beam, while building three-dimensional crystallographic and chemical maps of the sample. Because of the electrostatic final-lens design of the microscope column corrections to OIM Kikuchi patterns are not required due to magnetic field distortions. Transmission electron microscopy is also possible using the Scanning Transmission Electron Microscopy (STEM) detector.
- Maximum Resolution 1 nanometer
- Detectors available: SE2, In-lens secondary, OIM, Conventional Backscattered, STEM (possible), EDS (maximum resolution to 130 eV)