The electron probe, after its aberrations are corrected, features a current density level higher by an order of magnitude than conventional transmission electron microscopes. With this probe finely focused, the ARM200F is capable of atomic level analysis. It operates at 200kV, 120kV and 80kV.
This microscope is equipped with the following:
- Cold Field Emission Gun
- Upgraded GIF QuantumSE™ imaging filter with 1 µs Electrostatic fast shutter
- DUAL EELS
- Gatan BF/DF, HAADF STEM detectors
- JEOL BF/HAADF STEM detectors
- Gatan Orius Model 830 SC200 CCD camera 2kx2k camera
- Gatan UltraScan™ 4000 4kx4k CCD camera
- EDAX Si(Li) 30mm2 energy dispersive x-ray spectroscopy detector
- JEOL backscattered SE detector
Specifications at 200kV
- TEM lattice resolution 0.72 Å
- TEM point to point resolution 1.9 Å
- TEM information limit 1.0 Å
- STEM HAADF resolution 0.78 Å
- STEM BF resolution 1.1 Å
- Ronchigram flat region 46.16 mrad
- Energy resolution at full emission (15.0 µA) 0.46 eV
- Energy resolution at reduced emission (1.0 µA) 0.34 eV
Available Techniques
- High Resolution TEM imaging
- Atomic Resolution HAADF and ABF STEM Imaging
- Energy Filtered TEM
- EFTEM Spectrum Imaging
- STEM Spectrum Imaging
- Electron Energy Loss Spectroscopy
- EDS with 0.13 nm spatial resolution
- Electron Diffraction
For more information contact Yan Xin or visit the Transmission Electron Microscopy page on the Florida State University’s Office of Research website.